Avalanche-Mode Si Light-Emitting Transistor for Narrow-Band Emission Near 760 nm

We report an avalanche-mode light-emitting transistor (AMLET) in silicon (Si), based on a lateral bipolar junction, which emits light near 760 nm optical wavelength with record low bandwidth of 38 nm. The AMLET, designed CMOS-compatible silicon-on-insulator (SOI) photonics platform, is optically confined within $0.21 ~\mu \text{m}$ thick SOI layer, forms Fabry-Pérot (FP) resonator perpendicular to the Si surface. Light emitted from reverse biased emitter-base junction via phonon-assisted hot carrier recombination and, additionally, minority carriers are injected forward-biased Base-Collector junction. combination injection collector terminal through narrow base and FP resonance, yields high power efficiency notation="LaTeX">$4.3\times 10^{-6}$ at notation="LaTeX">${V}_{\text {BC}}=0.8$ V {EB}}=10$ V. Our work opens new possibilities spectral-engineering light-emitters, could boost performance all-Si interconnects sensors.